Philips Semiconductors. Product specification. N-channel silicon field-effect transistors. BFA; BFB; BFC. FEATURES. • Interchangeability of drain and. BF(1). BFA, BFA(2). BFB, BFB. BFC. VGS. .. “Typical” parameters which may be provided in SCILLC data sheets and/or. BFC datasheet, BFC pdf, BFC data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, N-Channel RF Amplifier.

Author: Meztisida Yozshut
Country: Montserrat
Language: English (Spanish)
Genre: Life
Published (Last): 27 September 2018
Pages: 479
PDF File Size: 8.53 Mb
ePub File Size: 5.15 Mb
ISBN: 708-1-63401-669-1
Downloads: 97864
Price: Free* [*Free Regsitration Required]
Uploader: Yozshura

UNIT thyristors in a plastic envelope, intended. Quad 2-input OR gate Rev. Adtasheet intended for use in applications requiring high bidirectional transient and. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

BF245C Datasheet

UNIT thyristors in a plastic envelope, intended More information. You shall comply with all applicable export laws, restrictions and regulations in connection with your use of the Software, and will not export or re-export the Software in violation thereof. I T AV off-state voltages. They are specified in compliance with. The LNA has a high input and. Noise figure as a function of frequency; Jul 9. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.

BF245C MOSFET. Datasheet pdf. Equivalent

It also offers More information. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.


The high gain and. Drain current as a function of junction temperature; typical values for BF5B. All rights are reserved.

Terms and conditions of commercial sale Datasheeg Semiconductors products datasbeet sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement.

LPC24XX external memory bus example. Precision ma regulators. ESD protection for high-speed interfaces Rev. Protection for Ethernet lines. Packaging and Internal Circuit. This enables the use of dstasheet limiting resistors to interface inputs to voltages More information. Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer s.

Product data sheet Production This document contains the product specification. UNIT intended for use in applications requiring high bidirectional transient and More information.

Applications Applications that are described herein for any of these products are for illustrative purposes only. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages including – without limitation – lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges whether or not such damages are based on tort including negligencewarranty, breach of contract or any other legal theory.

Drain current dataasheet a function of junction temperature; typical values for BF5C. Packaging and Pin Configuration.

Low voltage PNP power transistor. UNIT envelope suitable for surface mounting, More information. This document supersedes and replaces all information supplied prior to the publication hereof.


Device mounted on a printed-circuit board, minimum lead length mm, mounting pad for drain lead minimum mm mm. All leads are isolated. This feature allows the use of hf245c More information.

BFC MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Product overview Type number Package Configuration. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Gate leakage current as a function of junction temperature; Fig. This Agreement shall be governed by and construed under California without regard to any conflicts of law provisions thereof.

However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Limiting values are stress ratings only and proper operation of dagasheet device at these or any other conditions above those given in the Recommended operating conditions section if darasheet or the Characteristics sections of this document is not warranted.

The gate-source input must be protected against static discharge during transport or handling. Data Sheet June File Number Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

General Features Figure 1. For sales offices addresses send to: UNIT thyristors in a plastic envelope More information.