The 2N, 2N, 2N and 2N are sili- con planar TO (for 2N and 2N) and in Jedec . This datasheet has been download from. Semelab encourages customers to verify that datasheets are current before Test Conditions. Min. Typ. Max. Unit. LAB. SEME. 2N IC = 10mA. IB = 0. Sep 2. Philips Semiconductors. Product specification. NPN switching transistors. 2N; 2NA. FEATURES. • High current (max.

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Overall it is just another small signal transistor which is commonly used in switching and amplifying circuits.

When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around mV. Submitted by admin on 21 June Complete Technical Details can be found datashedt the datasheet given at the end of this page. Amplifier modules like Audio amplifiers, signal Amplifier etc.

2N Datasheet(PDF) – NXP Semiconductors

Here lets us assume the load here consumes around mA maximum so our collector current I C mA. So to calculate the resistor value of the base we can use the formulae. Another important thing to keep in mind, while using a transistor as switch is the base resistor.


To bias a transistor we have to supply current to base pin, this current I B should be limited to 5mA by using a transistor to the base pin. So if you looking for an NPN transistor that could switch loads or for decent amplification then 2N datashert the right choice for your project.

To make this current flow through the transistor the value of base current I B can be calculated using the below formula: To make this current flow through the transistor the value of base current I B can be calculated using the below formula:. Current Drains out through emitter, normally connected to ground.

2N2219 Datasheet, Equivalent, Cross Reference Search

When this transistor is fully biased then it can allow a maximum of mA to flow across the dahasheet and emitter. This stage is called Saturation Region.

This resistor is connected to the base pin of the transistor to limit the current flowing through the base. Where h FE, is the current gain of the transistor which in our case is The value of this current can be calculated by the required amount of current that will be consumed by the load. The maximum amount of current that could flow through the Collector pin is mA, hence datasheey cannot connect loads that consume more than mA using this transistor.

Since transistor is of NPN the load to be switched should be connected to the collector and the emitter should be connected to the ground as show in the figure below.


However this vale will not be very accurate because the transistor will have an internal voltage drop across the collector current, so it mostly experimental to get the maximum current from the transistor. But this calculation will lead to the closest value to start with. But it comes in a metal can package and can operate on voltages slightly higher than what a 2N can handle.

TL — Programmable Reference Voltage. Where Vcc is the voltage on which the load operates and V BE is the voltage across the Base and Emitter which in our case according to the data sheet 1. Current flows in through collector, normally connected to load. In our case for a collector current of mA we have to pass a base current of 16mA. So the value if R B will be. As we know the transistor is a current controlled device meaning, we have pass some current I B thorough the base of the transistor to turn it on.

The 2N is a NPN transistor and is normally used as a switch in many circuits.